High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

Roda Nur; Takashi Tsuchiya; Kasidit Toprasertpong; Kazuya Terabe; Shinichi Takagi; Mitsuru Takenaka

doi:10.1038/s43246-020-00103-0

Communications Materials (Dec 2020)

High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

Roda Nur,
Takashi Tsuchiya,
Kasidit Toprasertpong,
Kazuya Terabe,
Shinichi Takagi,
Mitsuru Takenaka

Affiliations

Roda Nur: Department of Electrical Engineering and Information Systems, The University of Tokyo
Takashi Tsuchiya: International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)
Kasidit Toprasertpong: Department of Electrical Engineering and Information Systems, The University of Tokyo
Kazuya Terabe: International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)
Shinichi Takagi: Department of Electrical Engineering and Information Systems, The University of Tokyo
Mitsuru Takenaka: Department of Electrical Engineering and Information Systems, The University of Tokyo

DOI: https://doi.org/10.1038/s43246-020-00103-0
Journal volume & issue: Vol. 1, no. 1
pp. 1 – 9

Abstract

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MoS2 is a promising two-dimensional material for optoelectronics. Here, MoS2 phototransistors with a dual-functioning HfO2 dielectric and charge-trapping layer achieve a responsivity of 1.1×106, due to an enhanced photogating effect from band edge alignment with oxygen vacancies.

Published in Communications Materials

ISSN: 2662-4443 (Online)
Publisher: Nature Portfolio
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.nature.com/commsmat/

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