Nature Communications (Sep 2017)
Tunneling anisotropic magnetoresistance driven by magnetic phase transition
- X. Z. Chen,
- J. F. Feng,
- Z. C. Wang,
- J. Zhang,
- X. Y. Zhong,
- C. Song,
- L. Jin,
- B. Zhang,
- F. Li,
- M. Jiang,
- Y. Z. Tan,
- X. J. Zhou,
- G. Y. Shi,
- X. F. Zhou,
- X. D. Han,
- S. C. Mao,
- Y. H. Chen,
- X. F. Han,
- F. Pan
Affiliations
- X. Z. Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- J. F. Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences
- Z. C. Wang
- Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University
- J. Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology
- X. Y. Zhong
- Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University
- C. Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- L. Jin
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich GmbH
- B. Zhang
- Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology
- F. Li
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- M. Jiang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- Y. Z. Tan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- X. J. Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- G. Y. Shi
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- X. F. Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- X. D. Han
- Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology
- S. C. Mao
- Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology
- Y. H. Chen
- Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology
- X. F. Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences
- F. Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University
- DOI
- https://doi.org/10.1038/s41467-017-00290-4
- Journal volume & issue
-
Vol. 8,
no. 1
pp. 1 – 7
Abstract
Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α′-FeRh magnetic electrode.
