Вестник Дагестанского государственного технического университета: Технические науки (Jul 2016)

SVETOTRANZISTOR

  • T. A. Ismailov,
  • H. M. Gadjiyev,
  • S. M. Gadjiyevа,
  • T. D. Nezhvedilov,
  • T. A. Chelushkina

DOI
https://doi.org/10.21822/2073-6185-2013-0-1(28)-7-10
Journal volume & issue
Vol. 28, no. 1
pp. 7 – 10

Abstract

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In this article the opportunity to form a pn-junction bipolar transistor as a light-emitting, which will increase the degree of integration of large scale integrated circuits by reducing heat gain.

Keywords