Science and Technology of Advanced Materials (Apr 2014)

Recent progress in photoactive organic field-effect transistors

  • Yutaka Wakayama,
  • Ryoma Hayakawa,
  • Hoon-Seok Seo

DOI
https://doi.org/10.1088/1468-6996/15/2/024202
Journal volume & issue
Vol. 15, no. 2
p. 024202

Abstract

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Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.