Core–Shell Structures Prepared by Atomic Layer Deposition on GaAs Nanowires
Veaceslav V. Ursaki,
Sebastian Lehmann,
Victor V. Zalamai,
Vadim Morari,
Kornelius Nielsch,
Ion M. Tiginyanu,
Eduard V. Monaico
Affiliations
Veaceslav V. Ursaki
National Center for Materials Study and Testing, Technical University of Moldova, 2004 Chisinau, Moldova
Sebastian Lehmann
Institute for Metallic Materials (IMW), Leibniz Institute of Solid State and Materials Research (IFW Dresden), Helmholtzstr. 20, 01069 Dresden, Germany
Victor V. Zalamai
National Center for Materials Study and Testing, Technical University of Moldova, 2004 Chisinau, Moldova
Vadim Morari
Institute of Electronic Engineering and Nanotechnologies “D. Ghitu”, 2028 Chisinau, Moldova
Kornelius Nielsch
Institute for Metallic Materials (IMW), Leibniz Institute of Solid State and Materials Research (IFW Dresden), Helmholtzstr. 20, 01069 Dresden, Germany
Ion M. Tiginyanu
National Center for Materials Study and Testing, Technical University of Moldova, 2004 Chisinau, Moldova
Eduard V. Monaico
National Center for Materials Study and Testing, Technical University of Moldova, 2004 Chisinau, Moldova
GaAs nanowire arrays have been prepared by anodization of GaAs substrates. The nanowires produced on (111)B GaAs substrates were found to be oriented predominantly perpendicular to the substrate surface. The prepared nanowire arrays have been coated with thin ZnO or TiO2 layers by means of thermal atomic layer deposition (ALD), thus coaxial core–shell hybrid structures are being fabricated. The hybrid structures have been characterized by scanning electron microscopy (SEM) for the morphology investigations, by Energy Dispersive X-ray (EDX) and X-ray diffraction (XRD) analysis for the composition and crystal structure assessment, and by photoluminescence (PL) spectroscopy for obtaining an insight on emission polarization related to different recombination channels in the prepared core–shell structures.
