Mitigating the Impact of Asymmetric Deformation on Advanced Metrology for Photolithography

Abstract

Controlling overlay in lithography is crucial for improving the yield of integrated circuit manufacturing. The process disturbances can cause undesirable morphology changes of overlay targets (such as asymmetric grating), which can significantly impact the accuracy of overlay metrology. It is essential to decouple the overlay target asymmetry from the wafer deformation, ensuring that the overlay metrology is free from the influence of process-induced asymmetry (e.g., grating asymmetry and grating imbalance). Herein, we use an asymmetric grating as a model and show that using high-diffraction-order light can mitigate the impact of asymmetric grating through the rigorous coupled-wave analysis (RCWA) method. In addition, we demonstrate the diffraction efficiency as a function of the diffraction order, wavelength, and pitch, which has guiding significance for improving the measurement accuracy of diffraction-based overlay (DBO) metrology.

Keywords

• edge placement error
• diffraction-based overlay
• extreme ultraviolet (EUV) lithography
• measurement
• alignment