Latent tracks of swift Bi ions in Si3N4

Abstract

Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si _3 N _4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.

Keywords

• swift heavy ions
• latent tracks
• electron microscopy
• x-ray diffraction
• molecular dynamics simulation