Uncovering upconversion photoluminescence in layered PbI2 above room temperature

Abstract

Abstract As a van der Waals (vdW) layered semiconductor material, lead iodide (PbI2) possessing a direct bandgap with strong photoluminescence emission in visible range has gained wide attention in applications of photonic and optoelectronic devices. Here, upconversion photoluminescence (UPL) in exfoliated PbI2 flakes is demonstrated at room temperature and elevated temperatures. The linear power dependence of UPL emission with 532 nm excitation suggests the one-photon involved multiphonon-assisted UPL emission process, which is revealed by the temperature-dependent UPL emission measurement. Meanwhile, the nonlinear power dependence of UPL emission with 561 nm excitation indicates the transition of UPL emission mechanism from linear to nonlinear regime, and the temperature-dependent UPL emission study further shows that the upconversion is contributed by both the multiphonon-assisted UPL process and the two-photon absorption induced PL process. This study will provide an insight to the understanding of photon upconversion in vdW layered semiconductors and advancing applications in temperature-controlled photon upconversion, tunable photonics, photodetection and imaging.

Keywords

• Upconversion photoluminescence
• Layered PbI2