Preparation and properties of – ceramics and polycrystalline films

Abstract

In this paper, we report the successful growth of 0.5BiFeO3–0.5[Formula: see text][Formula: see text]O3/SrTiO3/Si(001) heterostructure using RF-cathode sputtering in an oxygen atmosphere. The deposited films have been investigated by X-ray diffractometry and spectroscopic ellipsometry (SE). 0.5BiFeO3–0.5[Formula: see text][Formula: see text]O3 films on silicon substrates with a strontium titanate buffer layer are single-phase, polycrystalline with a texture in the 001 direction. The unit cell parameters calculated in the tetragonal approximation were [Formula: see text] = 4.005 ± 0.001 [Formula: see text]; [Formula: see text] = 3.995 ± 0.001 [Formula: see text]. The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed. Dielectric properties and capacitance-voltage characteristics have been measured. The ellipsometric parameters have been obtained.

Keywords

• Relaxation non-Debye type process
• phase transition
• high-temperature multiferroic
• polycrystalline thin films