Physicochemical conditions of GaAs/GaAsxNy/GaN nanochips stability

Abstract

In this work the study of the stability nanochips GaAs / GaAsxNy / GaN is presented. For the calculation of parameters used quantum-chemical and thermodynamic approaches. The calculations of the surface free energy nanochips within the models used show that a significant contribution to the crystalline structure stability of the GaN layer is the molar concentration of nitrogen atoms in the intermediate layer GaAsxNy nanochips GaAs / GaAsxNy / GaN.

Keywords

• квантово-химические расчеты
• устойчивость наночипов
• арсениды галлия
• нитрид галлия
• термодинамика
• кристаллическая структура