APL Materials (Oct 2019)

Highly mobile carriers in a candidate of quasi-two-dimensional topological semimetal AuTe2Br

  • Zeji Wang,
  • Shuyu Cheng,
  • Tay-Rong Chang,
  • Wenlong Ma,
  • Xitong Xu,
  • Huibin Zhou,
  • Guangqiang Wang,
  • Xin Gui,
  • Haipeng Zhu,
  • Zhen Zhu,
  • Hao Zheng,
  • Jinfeng Jia,
  • Junfeng Wang,
  • Weiwei Xie,
  • Shuang Jia

DOI
https://doi.org/10.1063/1.5121751
Journal volume & issue
Vol. 7, no. 10
pp. 101110 – 101110-9

Abstract

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We report the crystal and electronic structures of a noncentrosymmetric quasi-two-dimensional (2D) candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and nontrivial hole pockets, which host a Dirac cone along the kz direction. Our transport measurements on the single crystals show highly anisotropic, compensated low-density electrons and holes, both of which exhibit ultrahigh mobility at a level of 105 cm2 V−1 s−1 at low temperature. The highly mobile, compensated carriers lead a nonsaturated, parabolic magnetoresistance as large as 3 × 105 in single-crystalline AuTe2Br in a magnetic field up to 58 T.