PHEMT transistor models for accurate CAD of MMIC amplifier

Abstract

Accurate modeling of microwave monolithic integrated circuits (MMICs) is very desirable for the reason of high fabrication costs of GaAs circuits. Designers are trying to achieve the ``first trial success`` to lower costs and accelerate the introduction of new products. Mature and reliable technology and accurate models of circuit components - active devices in particular - are crucial for the achievement of economic goals. The D0AH process from the Philips Microwave Limeil (PML) foundry has proven to provide reliable and repeatable circuits, as our 4 year experience indicates. The models presented here are based on many measurements of individual transistors and complete MMICs[1]. These results may aid other designers to select proper model and to adjust its parameters appropriately. The emphasis has been placed on nonlinear models capable of accurate prediction of intermodulation distortion. The level of the IM products is one of the most important parameters specified for modern telecommunication circuits.

Keywords

• monolithic microwave integrated circuits
• transistor modeling