Sputter deposition of ZnO–AlN pseudo-binary amorphous alloys with tunable band gaps in the deep ultraviolet region

Abstract

ZnO–AlN pseudo-binary amorphous alloys (a-ZAON hereinafter) with tunable band gaps in the deep ultraviolet (DUV) region have been synthesized using magnetron sputtering. The miscibility gap between ZnO and AlN has been overcome using room-temperature sputtering deposition, leveraging the rapid quenching abilities of sputtered particles to fabricate metastable but single-phase alloys. X-ray diffraction patterns and optical transmittance spectra revealed that the synthesized films with chemical composition ratios of [Zn]/([Zn] + [Al]) = 0.24–0.79 likely manifested as single-phase of a-ZAON films. Despite their amorphous structures, these films presented direct band gaps of 3.4–5.8 eV and thus high optical absorption coefficients (10 ^5 cm ^−1 ). Notably, the observed values adhered to Vegard’s law for crystalline ZnO–AlN systems, implying that the a-ZAON films were solid solution alloys with atomic-level mixing. Furthermore, atomic force microscopy analyses revealed smooth film surfaces with root-mean-square roughness of 0.8–0.9 nm. Overall, the wide-ranging band gap tunability, high absorption coefficients, amorphous structures, surface smoothness, and low synthesis temperatures of a-ZAON films position them as promising materials for use in DUV optoelectronic devices and power devices fabricated using large-scale glass and flexible substrates.

Keywords

• semiconductor
• ultra-wide band gap
• amorphous
• pseudo-binary alloys
• chemical composition
• sputtering