The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

Donghua Liu; Xiangming Xu; Feng Jin; Wenting Duan; Huihui Wang; Jing Shi; Yuan Yao; Jun Hu; Wensheng Qian; Pengfei Wang; David Wei Zhang

doi:10.1155/2015/834545

Advances in Condensed Matter Physics (Jan 2015)

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

Donghua Liu,
Xiangming Xu,
Feng Jin,
Wenting Duan,
Huihui Wang,
Jing Shi,
Yuan Yao,
Jun Hu,
Wensheng Qian,
Pengfei Wang,
David Wei Zhang

Affiliations

Donghua Liu: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Xiangming Xu: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Feng Jin: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Wenting Duan: Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China
Huihui Wang: Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China
Jing Shi: Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China
Yuan Yao: Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China
Jun Hu: Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China
Wensheng Qian: Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China
Pengfei Wang: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
David Wei Zhang: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

DOI: https://doi.org/10.1155/2015/834545
Journal volume & issue: Vol. 2015

Abstract

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This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2) are achieved.

Published in Advances in Condensed Matter Physics

ISSN: 1687-8108 (Print); 1687-8124 (Online)
Publisher: Wiley
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://onlinelibrary.wiley.com/journal/4042

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