Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings
Yongjun Tang,
Meixin Feng,
Jianxun Liu,
Shizhao Fan,
Xiujian Sun,
Qian Sun,
Shuming Zhang,
Tong Liu,
Yaping Kong,
Zengli Huang,
Masao Ikeda,
Hui Yang
Affiliations
Yongjun Tang
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Meixin Feng
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Jianxun Liu
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Shizhao Fan
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Xiujian Sun
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
Qian Sun
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Shuming Zhang
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Tong Liu
Vacuum Interconnected Nanotech Workstation, SINANO, CAS, Suzhou 215123, China
Yaping Kong
Vacuum Interconnected Nanotech Workstation, SINANO, CAS, Suzhou 215123, China
Zengli Huang
Vacuum Interconnected Nanotech Workstation, SINANO, CAS, Suzhou 215123, China
Masao Ikeda
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
Hui Yang
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.
