The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er<sup>3+</sup>-Doped Ga<sub>2</sub>O<sub>3</sub> Thin Films
Yuanlin Liang,
Haisheng Chen,
Dianmeng Dong,
Jiaxing Guo,
Xiaona Du,
Taiyu Bian,
Fan Zhang,
Zhenping Wu,
Yang Zhang
Affiliations
Yuanlin Liang
Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Haisheng Chen
Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Dianmeng Dong
State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Jiaxing Guo
Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Xiaona Du
Institute of Photoelectric Thin Film Devices and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
Taiyu Bian
Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Fan Zhang
State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Zhenping Wu
State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Yang Zhang
Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga2O3 still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature-grown amorphous Ga2O3 demonstrates comparable performance with its crystalline counterparts. Lanthanide Er3+-doped Ga2O3 (Ga2O3: Er) possesses great potential for developing light-emitting devices, photodetectors, solid-state lasers, and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here, we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga2O3: Er thin films. Through controlling the growth temperature of Ga2O3: Er films, the upconversion luminescence of crystalline Ga2O3: Er thin film is strongly enhanced over 100 times that of the amorphous Ga2O3: Er thin film. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga2O3: Er thin films. These results will aid further designs of favorable optoelectronic devices integrated with lanthanide-doped Ga2O3 thin films.
