Eurasian Journal of Physics and Functional Materials (Sep 2021)

Influence of Cu+ impurity on the efficiency of creation of electron hole trapping centers in irradiated Na2SO4-Cu crystals

  • T.N. Nurakhmetov,
  • B.N. Yussupbekova,
  • A.M. Zhunusbekov,
  • D.H. Daurenbekov,
  • B.M. Sadykova,
  • K.B. Zhangylyssov,
  • T.T. Alibay,
  • D.A. Tolekov

DOI
https://doi.org/10.32523/ejpfm.2021050305
Journal volume & issue
Vol. 5, no. 3
pp. 200 – 208

Abstract

Read online

The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the recombination processes is transferred to impurities.

Keywords