Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor
Junsu Yu,
Sihyun Kim,
Donghyun Ryu,
Kitae Lee,
Changha Kim,
Jong-Ho Lee,
Sangwan Kim,
Byung-Gook Park
Affiliations
Junsu Yu
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
Sihyun Kim
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
Donghyun Ryu
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
Kitae Lee
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
Changha Kim
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
Jong-Ho Lee
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
Sangwan Kim
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea
Byung-Gook Park
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because of increased off-current due to the large ambipolar current. In this paper, a stacked gate L-shaped TFET is proposed for suppression of ambipolar current. Stacked gates can be easily implemented using the structural features of L-shaped TFET, and on- and off-current can be controlled separately by using different gates located near the source and the drain, respectively. As a result, the suppression of ambipolarity is observed with respect to work function difference between two gates by simulation of the band-to-band tunneling generation. Furthermore, the proposed device suppresses ambipolar current better than existing ambipolar current suppression methods. In particular, low drain resistance is achieved as there is no need to reduce drain doping, which leads to a 7% enhanced on-current. Finally, we present the fabrication method for a stacked gate L-shaped TFET.
