In this paper we demonstrate a novel acoustic wave pressure sensor, based on an aluminum nitride (AlN) piezoelectric thin film. It contains an integrated vacuum cavity, which is micro-fabricated using a cavity silicon-on-insulator (SOI) wafer. This sensor can directly measure the absolute pressure without the help of an external package, and the vacuum cavity gives the sensor a very accurate reference pressure. Meanwhile, the presented pressure sensor is superior to previously reported acoustic wave pressure sensors in terms of the temperature drift. With the carefully designed dual temperature compensation structure, a very low temperature coefficient of frequency (TCF) is achieved. Experimental results show the sensor can measure the absolute pressure in the range of 0 to 0.4 MPa, while the temperature range is from 20 °C to 220 °C with a TCF of −14.4 ppm/°C. Such a TCF is only about half of that of previously reported works.
