THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP

Abstract

Film silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, whichinclude: thermal oxidation, anodizing in electrolytes, pyrolytic deposition (deposition from the gas phase and plasma anodizing or oxidation.

Keywords

• film
• hydrogen
• oxygen
• oxidation
• material
• adsorption oxidant
• surface diffusion
• oxide
• process
• semiconductors
• thermal oxidation
• pyrolytic deposition
• adhesion and formation