Development of scintillators on the basis of AIIBVI compounds for radiation instruments used in medical and technical applications

Abstract

Physico-technological problems of preparation and main properties of scintillation materials based on zinc selenide and other AIIBVI compounds are considered. Effects have been determined of dopant properties on formation processes of complex lattice defects playing the role of luminescence centers. It is shown that such property features as high light output and very low afterglow level, as well as a unique combination of scintillation and semiconductor properties allow application of these materials in different fields of radiation instrument technologies.

Keywords

• AIIBVI compounds crystals
• scintillation characteristics
• luminescence centers
• ionizing radiation detectors