In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching
Abdul Kareem K. Soopy,
Zhaonan Li,
Tianyi Tang,
Jiaqian Sun,
Bo Xu,
Chao Zhao,
Adel Najar
Affiliations
Abdul Kareem K. Soopy
Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE
Zhaonan Li
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Tianyi Tang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
Jiaqian Sun
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
Bo Xu
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
Chao Zhao
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
Adel Najar
Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE
This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
