Schematic-Topological Modeling of the SOI CMOS Ring Oscillators for Sensor Microsystems on Chip

Abstract

The paper presents the results of research of frequency and energy characteristics of ring generators on the basis of silicon-on-isolator of the CMOS transistor structures, depending on their circuit design and constructive and technological implementation, design and modeling of the schemes of the primary transformation of information from integral sensitive elements for sensor microsystems-on-crystal Keywords: silicon-on-insulator; ring generator; sensitive element; sensor microsystem on the chip.