Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output

Abstract

Given the operation conditions wherein mechanical wear is inevitable, modifying bulk properties of the dielectric layer of a triboelectric nanogenerator (TENG) has been highlighted to boost its energy output. However, several concerns still remain in regards to the modification due to high-cost materials and cumbersome processes being required. Herein, we report TENG with a microstructured Al electrode (TENG_ME) as a new approach to modifying bulk properties of the dielectric layer. The microstructured Al electrode is utilized as a component of TENG to increase the interfacial area between the dielectric layer and electrode. Compared to the TENG with a flat Al electrode (TENG_F), the capacitance of TENG_ME is about 1.15 times higher than that of TENG_F, and the corresponding energy outputs of a TENG_ME are 117 μA and 71 V, each of which is over 1.2 times higher than that of the TENG_F. The robustness of TENG_ME is also confirmed in the measurement of energy outputs changing after sandpaper abrasion tests, repetitive contact, and separation (more than 105 cycles). The results imply that the robustness and long-lasting performance of the TENG_ME could be enough to apply in reliable auxiliary power sources for electronic devices.

Keywords

• robust triboelectric nanogenerator
• increased interfacial area
• microstructured Al electrode by wet etching in HCl
• long-lasting performance