Low-voltage solution-processed Cuprous thiocyanate Thin-Film transistors with NAND logic function

Abstract

Coprous thiocyanate (CuSCN)-based thin-film transistors (TFTs) by solution-processed chitosan electrolyte are fabricated on glass substrates. Such TFTs show a low operation voltage of −2.0 V due to the large specific gate capacitance of 7.65 μF/cm2 related to electric-double-layer (EDL) formation. The threshold voltage, drain current on/off ratio and field-effect mobility are estimated to be 0.28 V, 2.0 × 103 and 0.11 cm2V−1s−1, respectively. The threshold voltage of CuSCN-based TFTs shifts significantly after laser or annealing treatment. Moreover, this work implements NAND logic function on CuSCN-based TFTs for the first time. These results offer new possibilities in the development of inorganic p-type semiconductors and single-device logic applications.

Keywords

• Thin-film transistors
• Cuprous thiocyanate
• NAND logic
• Electric double layer