E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer

Abstract

Abstract InAs quantum dots (QDs) are receiving attention as next‐generation E‐band light source that offers high‐temperature operation and temperature insensitive operation. However, high‐density crystal defects occur at the interface between the InGaAs buffer layer and GaAs, resulting in reduced device performance and shortened lifetime. Here, E‐band QD lasers are demonstrated on InGaAs buffer layer, which suppressed the spread of dislocation by introducing a high‐temperature annealing and a strained layer superlattice filter. In the device, the peak wavelength at room temperature is measured to be 1427 nm and the threshold current density was 440 A/cm2. This result indicates that E‐band QD laser structures on low threading dislocation density are promising for the realisation of high‐performance E‐band lasers.

Keywords

• Lasing action in semiconductors
• Design of specific laser systems
• Other optical materials
• Slip, creep, internal friction and other indirect evidence of dislocations
• Thin film growth, structure, and epitaxy
• Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures)