MODELLING OF THIN Si LAYERS GROWTH ON PARTIALLY MASKED Si SUBSTRATE

Abstract

This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface.

Keywords

• epitaxial lateral overgrowth
• liquid-phase epitaxial growth
• computer simulations