Nature Communications (Apr 2016)

Quantum simulation of the Hubbard model with dopant atoms in silicon

  • J. Salfi,
  • J. A. Mol,
  • R. Rahman,
  • G. Klimeck,
  • M. Y. Simmons,
  • L. C. L. Hollenberg,
  • S. Rogge

DOI
https://doi.org/10.1038/ncomms11342
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 6

Abstract

Read online

The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM.