Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Matteo Ghittorelli; Thomas Lenz; Hamed Sharifi Dehsari; Dong Zhao; Kamal Asadi; Paul W. M. Blom; Zsolt M. Kovács-Vajna; Dago M. de Leeuw; Fabrizio Torricelli

doi:10.1038/ncomms15841

Nature Communications (Jun 2017)

Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Matteo Ghittorelli,
Thomas Lenz,
Hamed Sharifi Dehsari,
Dong Zhao,
Kamal Asadi,
Paul W. M. Blom,
Zsolt M. Kovács-Vajna,
Dago M. de Leeuw,
Fabrizio Torricelli

Affiliations

Matteo Ghittorelli: Department of Information Engineering, University of Brescia
Thomas Lenz: Max Planck Institute for Polymer Research
Hamed Sharifi Dehsari: Max Planck Institute for Polymer Research
Dong Zhao: Max Planck Institute for Polymer Research
Kamal Asadi: Max Planck Institute for Polymer Research
Paul W. M. Blom: Max Planck Institute for Polymer Research
Zsolt M. Kovács-Vajna: Department of Information Engineering, University of Brescia
Dago M. de Leeuw: Max Planck Institute for Polymer Research
Fabrizio Torricelli: Department of Information Engineering, University of Brescia

DOI: https://doi.org/10.1038/ncomms15841
Journal volume & issue: Vol. 8, no. 1
pp. 1 – 8

Abstract

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Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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