Nonthermal Equilibrium Process of Charge Carrier Extraction in Metal/Insulator/Organic Semiconductor/Metal (MIOM) Junction

Abstract

This paper presents the concept and experimental evidence for the nonthermal equilibrium (NTE) process of charge carrier extraction in metal/insulator/organic semiconductor/metal (MIOM) capacitors. These capacitors are structurally similar to metal/insulator/semiconductor/(metal) (MIS) capacitors found in standard semiconductor textbooks. The difference between the two capacitors is that the (organic) semiconductor/metal contacts in the MIOM capacitors are of the Schottky type, whereas the contacts in the MIS capacitors are of the ohmic type. Moreover, the mobilities of most organic semiconductors are significantly lower than those of inorganic semiconductors. As the MIOM structure is identical to the electrode portion of an organic field-effect transistor (OFET) with top-contact and bottom-gate electrodes, the hysteretic behavior of the OFET transfer characteristics can be deduced from the NTE phenomenon observed in MIOM capacitors.

Keywords

• hysteresis
• bias stress effect
• organic semiconductors
• organic field-effect transistors
• metal/insulator/organic semiconductor/metal
• non-thermal equilibrium process