Microstructure and properties of polycrystalline PZT films obtained by RF magnetron sputtering with fine variation of the composition near morphotropic phase boundary

Abstract

The article discusses the possibilities of fine composition variation of polycrystalline PZT films at the morphotropic phase boundary. The composition of thin films prepared by RF magnetron sputtering of a ceramic target of stoichiometric composition PbZr0.54Ti0.46O3 was varied by changing the distance from the target to the substrate in the range of 30–70 mm. This made it possible to change the composition by ~1.5%. The study focused on the dielectric properties of the formed self-polarized films. The study found that the resistance to external electric fields depends on the conditions of film preparation.

Keywords

• method of fine composition variation
• PZT
• thin films
• morphotropic phase boundary
• scanning electron microscopy