Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates
Y. Gu,
W. G. Huang,
J. Zhang,
X. Y. Chen,
Y. J. Ma,
H. Huang,
G. X. He,
Y. G. Zhang
Affiliations
Y. Gu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
W. G. Huang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
J. Zhang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
X. Y. Chen
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. J. Ma
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
H. Huang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
G. X. He
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. G. Zhang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
This work reports on the approach of metamorphic In(Ga)As quantum wells on GaP/Si(001) substrates for Si-based mid-infrared applications. Metamorphic InP and In0.83Al0.17As templates are grown on Si, and room temperature photoluminescence emissions at 2.1 μm and 2.6 μm have been demonstrated from InAs/In0.53Ga0.47As triangular quantum wells and InAs quantum wells on the templates, respectively. The surface root mean square roughness is 4-5 nm. The quantum wells act fully strained and the threading dislocation density is 107-108 cm-2 in the upper side of buffer.
