Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates

Y. Gu; W. G. Huang; J. Zhang; X. Y. Chen; Y. J. Ma; H. Huang; G. X. He; Y. G. Zhang

doi:10.1063/1.5051062

AIP Advances (Dec 2018)

Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates

Y. Gu,
W. G. Huang,
J. Zhang,
X. Y. Chen,
Y. J. Ma,
H. Huang,
G. X. He,
Y. G. Zhang

Affiliations

Y. Gu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
W. G. Huang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
J. Zhang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
X. Y. Chen: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. J. Ma: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
H. Huang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
G. X. He: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. G. Zhang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

DOI: https://doi.org/10.1063/1.5051062
Journal volume & issue: Vol. 8, no. 12
pp. 125318 – 125318-6

Abstract

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This work reports on the approach of metamorphic In(Ga)As quantum wells on GaP/Si(001) substrates for Si-based mid-infrared applications. Metamorphic InP and In0.83Al0.17As templates are grown on Si, and room temperature photoluminescence emissions at 2.1 μm and 2.6 μm have been demonstrated from InAs/In0.53Ga0.47As triangular quantum wells and InAs quantum wells on the templates, respectively. The surface root mean square roughness is 4-5 nm. The quantum wells act fully strained and the threading dislocation density is 107-108 cm-2 in the upper side of buffer.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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