Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

Matthew S. Wong; Philip Chan; Norleakvisoth Lim; Haojun Zhang; Ryan C. White; James S. Speck; Steven P. Denbaars; Shuji Nakamura

doi:10.3390/cryst12050721

Crystals (May 2022)

Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

Matthew S. Wong,
Philip Chan,
Norleakvisoth Lim,
Haojun Zhang,
Ryan C. White,
James S. Speck,
Steven P. Denbaars,
Shuji Nakamura

Affiliations

Matthew S. Wong: Materials Department, University of California, Santa Barbara, CA 93106, USA
Philip Chan: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Norleakvisoth Lim: Department of Chemical Engineering, University of California, Santa Barbara, CA 93106, USA
Haojun Zhang: Materials Department, University of California, Santa Barbara, CA 93106, USA
Ryan C. White: Materials Department, University of California, Santa Barbara, CA 93106, USA
James S. Speck: Materials Department, University of California, Santa Barbara, CA 93106, USA
Steven P. Denbaars: Materials Department, University of California, Santa Barbara, CA 93106, USA
Shuji Nakamura: Materials Department, University of California, Santa Barbara, CA 93106, USA

DOI: https://doi.org/10.3390/cryst12050721
Journal volume & issue: Vol. 12, no. 5
p. 721

Abstract

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In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm2 for device dimensions from 5 × 5 to 100 × 100 µm2. The µLEDs emit at 692 nm at 5 A/cm2 and 637 nm at 100 A/cm2, corresponding to a blueshift of 55 nm due to the screening of the internal electric field in the quantum wells. The maximum external quantum efficiency and wall-plug efficiency of µLEDs are 0.31% and 0.21%, respectively. This suggests that efficient III-nitride red µLEDs can be realized with further material optimizations.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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