Micromachines (Aug 2019)

A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications

  • Lu-Rong Gan,
  • Ya-Rong Wang,
  • Lin Chen,
  • Hao Zhu,
  • Qing-Qing Sun

DOI
https://doi.org/10.3390/mi10090558
Journal volume & issue
Vol. 10, no. 9
p. 558

Abstract

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We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO2 high-k dielectric extend above source and drain, the integrated density can be well improved, while the erasing and programming speed of the device are respectively decreased to 75 ns and 50 ns. In addition, comprehensive synaptic abilities including long-term potentiation (LTP) and long-term depression (LTD) are demonstrated in our U-shape recessed channel FG memory, highly resembling the biological synapses. These simulation results show that our device has the potential to be well used as embedded memory in neuromorphic computing and MCU (Micro Controller Unit) applications.

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