PREPARATION AND CHARACTERIZATION OF METAL ORGANIC CHEMICAL VAPOUR DEPOSITED COPPER ZINC SULPHIDE THIN FILMS USING SINGLE SOLID SOURCE PRECURSORS

Abstract

Metal organic chemical vapour deposition (MOCVD) was used with a mixed single solid source precursors of copper dithiocarbamate (CuC10H16N2O2S4) and zinc dithiocarbamate (ZnC10H16N2O2S4) to prepare pyrolysed copper zinc sulphide thin films. The precursors were analysed by Fourier Transform Infrared Spectroscopy (FTIR), to determine the structures present. The films were deposited on glass substrates at a temperature of 420 0C. Experimental results showed that the compositional studies were found to be complementary. The structural analyses revealed that the film is crystalline with an average grain size of approximately 4 μm. An optical band gap energy of 2.50 eV was obtained with an absorbance that decreases with wavelength. The electrical characterization gave values of sheet resistance, resistivity and conductivity of the film as 5.13 x10-6 Ω/Sq, 2.27 x 10-1 Ω.cm and 3.61 x 10-2 (Ω.cm)-1 respectively. The findings confirmed that the synthesized precursors are potential materials for depositing high quality copper zinc sulphide thin films.

Keywords

• precursor
• substrate
• mocvd
• copper zinc sulphide
• dithiocarbamate.