Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

Kui Wu; Yiyun Zhang; Tongbo Wei; Ding Lan; Bo Sun; Haiyang Zheng; Hongxi Lu; Yu Chen; Junxi Wang; Yi Luo; Jinmin Li

doi:10.1063/1.4823478

AIP Advances (Sep 2013)

Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

Kui Wu,
Yiyun Zhang,
Tongbo Wei,
Ding Lan,
Bo Sun,
Haiyang Zheng,
Hongxi Lu,
Yu Chen,
Junxi Wang,
Yi Luo,
Jinmin Li

Affiliations

Kui Wu: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yiyun Zhang: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Tongbo Wei: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Ding Lan: National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080, China
Bo Sun: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Haiyang Zheng: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Hongxi Lu: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yu Chen: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Junxi Wang: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yi Luo: Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China
Jinmin Li: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

DOI: https://doi.org/10.1063/1.4823478
Journal volume & issue: Vol. 3, no. 9
pp. 092124 – 092124-7

Abstract

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The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8° reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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