IEEE Access (Jan 2024)

Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C

  • Christian Sbrana,
  • Alessandro Catania,
  • Maksym Paliy,
  • Stefano Di Pascoli,
  • Sebastiano Strangio,
  • Massimo Macucci,
  • Giuseppe Iannaccone

DOI
https://doi.org/10.1109/ACCESS.2024.3387714
Journal volume & issue
Vol. 12
pp. 57236 – 57249

Abstract

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In this paper, we discuss the challenges at the device and circuit level that must be addressed to design reliable silicon CMOS integrated circuits operating in high-temperature environments. We present experimental results on representative devices fabricated with a 180 nm CMOS SOI platform, which have been characterized up to 300°C, discuss issues arising at high temperature, and propose possible solutions. A BJT-based temperature sensor core is also described and evaluated across the same extended temperature range. We also propose and discuss design criteria optimized for a wide range of operating temperature. A sufficient on/off current ratio can be achieved by taking advantage of the isolation provided by low-leakage CMOS SOI process, while operation at low current density must be ensured to mitigate electromigration effects. Within these conditions, low-power precise sensing circuits can be effectively implemented with operating temperature up to 300°C, that are extremely relevant for industrial, mobility, and space applications.

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