Nanomaterials
(Jul 2021)
Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers
Vladimir V. Rumyantsev,
Anna A. Razova,
Leonid S. Bovkun,
Dmitriy A. Tatarskiy,
Vladimir Y. Mikhailovskii,
Maksim S. Zholudev,
Anton V. Ikonnikov,
Tatyana A. Uaman Svetikova,
Kirill V. Maremyanin,
Vladimir V. Utochkin,
Mikhail A. Fadeev,
Vladimir G. Remesnik,
Vladimir Y. Aleshkin,
Nikolay N. Mikhailov,
Sergey A. Dvoretsky,
Marek Potemski,
Milan Orlita,
Vladimir I. Gavrilenko,
Sergey V. Morozov
Affiliations
Vladimir V. Rumyantsev
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Anna A. Razova
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Leonid S. Bovkun
LNCMI-EMFL, CNRS UPR3228, University Grenoble Alpes, University Toulouse, University Toulouse 3, INSA-T, 38042 Grenoble, France
Dmitriy A. Tatarskiy
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Vladimir Y. Mikhailovskii
Resource Center for Nanotechnology, Saint-Petersburg University, 199034 Saint-Petersburg, Russia
Maksim S. Zholudev
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Anton V. Ikonnikov
Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
Tatyana A. Uaman Svetikova
Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
Kirill V. Maremyanin
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Vladimir V. Utochkin
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Mikhail A. Fadeev
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Vladimir G. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
Vladimir Y. Aleshkin
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Nikolay N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
Sergey A. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
Marek Potemski
LNCMI-EMFL, CNRS UPR3228, University Grenoble Alpes, University Toulouse, University Toulouse 3, INSA-T, 38042 Grenoble, France
Milan Orlita
LNCMI-EMFL, CNRS UPR3228, University Grenoble Alpes, University Toulouse, University Toulouse 3, INSA-T, 38042 Grenoble, France
Vladimir I. Gavrilenko
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
Sergey V. Morozov
Institute for Physics of Microstructures of RAS, 603950 Nizhny Novgorod, Russia
DOI
https://doi.org/10.3390/nano11071855
Journal volume & issue
Vol. 11,
no. 7
Abstract
Read online
HgTe/CdHgTe quantum well (QW) heterostructures have attracted a lot of interest recently due to insights they provided towards the physics of topological insulators and massless Dirac fermions. Our work focuses on HgCdTe QWs with the energy spectrum close to the graphene-like relativistic dispersion that is supposed to suppress the non-radiative Auger recombination. We combine various methods such as photoconductivity, photoluminescence and magneto-optical measurements as well as transmission electron microscopy to retrofit growth parameters in multi-QW waveguide structures, designed for long wavelengths lasing in the range of 10–22 μm. The results reveal that the attainable operating temperatures and wavelengths are strongly dependent on Cd content in the QW, since it alters the dominating recombination mechanism of the carriers.
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