Highly 28Si enriched silicon by localised focused ion beam implantation

Ravi Acharya; Maddison Coke; Mason Adshead; Kexue Li; Barat Achinuq; Rongsheng Cai; A. Baset Gholizadeh; Janet Jacobs; Jessica L. Boland; Sarah J. Haigh; Katie L. Moore; David N. Jamieson; Richard J. Curry

doi:10.1038/s43246-024-00498-0

Communications Materials (May 2024)

Highly 28Si enriched silicon by localised focused ion beam implantation

Ravi Acharya,
Maddison Coke,
Mason Adshead,
Kexue Li,
Barat Achinuq,
Rongsheng Cai,
A. Baset Gholizadeh,
Janet Jacobs,
Jessica L. Boland,
Sarah J. Haigh,
Katie L. Moore,
David N. Jamieson,
Richard J. Curry

Affiliations

Ravi Acharya: Department of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester
Maddison Coke: Department of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester
Mason Adshead: Department of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester
Kexue Li: Department of Materials, Photon Science Institute, University of Manchester
Barat Achinuq: Department of Materials, University of Manchester
Rongsheng Cai: Department of Materials, University of Manchester
A. Baset Gholizadeh: Department of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester
Janet Jacobs: Department of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester
Jessica L. Boland: Department of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester
Sarah J. Haigh: Department of Materials, University of Manchester
Katie L. Moore: Department of Materials, Photon Science Institute, University of Manchester
David N. Jamieson: School of Physics, University of Melbourne
Richard J. Curry: Department of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester

DOI: https://doi.org/10.1038/s43246-024-00498-0
Journal volume & issue: Vol. 5, no. 1
pp. 1 – 7

Abstract

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Abstract Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the 29Si isotope which has a non-zero nuclear spin. This work presents a method for the depletion of 29Si in localised volumes of natural silicon wafers by irradiation using a 45 keV 28Si focused ion beam with fluences above 1 × 1019 ions cm−2. Nanoscale secondary ion mass spectrometry analysis of the irradiated volumes shows residual 29Si concentration down to 2.3 ± 0.7 ppm and with residual C and O comparable to the background concentration in the unimplanted wafer. After annealing, transmission electron microscopy lattice images confirm the solid phase epitaxial re-crystallization of the as-implanted amorphous enriched volume extending over 200 nm in depth.

Published in Communications Materials

ISSN: 2662-4443 (Online)
Publisher: Nature Portfolio
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.nature.com/commsmat/

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