Advanced Science (Jul 2024)

Multi‐Level Switching of Spin‐Torque Ferromagnetic Resonance in 2D Magnetite

  • Zhiyan Jia,
  • Qian Chen,
  • Wenjie Wang,
  • Rong Sun,
  • Zichao Li,
  • René Hübner,
  • Shengqiang Zhou,
  • Miming Cai,
  • Weiming Lv,
  • Zhipeng Yu,
  • Fang Zhang,
  • Mengfan Zhao,
  • Sen Tian,
  • Lixuan Liu,
  • Zhongming Zeng,
  • Yong Jiang,
  • Zhongchang Wang

DOI
https://doi.org/10.1002/advs.202401944
Journal volume & issue
Vol. 11, no. 26
pp. n/a – n/a

Abstract

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Abstract 2D magnetic materials hold substantial promise in information storage and neuromorphic device applications. However, achieving a 2D material with high Curie temperature (TC), environmental stability, and multi‐level magnetic states remains a challenge. This is particularly relevant for spintronic devices, which require multi‐level resistance states to enhance memory density and fulfil low power consumption and multi‐functionality. Here, the synthesis of 2D non‐layered triangular and hexagonal magnetite (Fe3O4) nanosheets are proposed with high TC and environmental stability, and demonstrate that the ultrathin triangular nanosheets show broad antiphase boundaries (bAPBs) and sharp antiphase boundaries (sAPBs), which induce multiple spin precession modes and multi‐level resistance. Conversely, the hexagonal nanosheets display slip bands with sAPBs associated with pinning effects, resulting in magnetic‐field‐driven spin texture reversal reminiscent of “0” and “1” switching signals. In support of the micromagnetic simulation, direct explanation is offer to the variation in multi‐level resistance under a microwave field, which is ascribed to the multi‐spin texture magnetization structure and the randomly distributed APBs within the material. These novel 2D magnetite nanosheets with unique spin textures and spin dynamics provide an exciting platform for constructing real multi‐level storage devices catering to emerging information storage and neuromorphic computing requirements.

Keywords