Nature Communications (Nov 2020)

Valley interference and spin exchange at the atomic scale in silicon

  • B. Voisin,
  • J. Bocquel,
  • A. Tankasala,
  • M. Usman,
  • J. Salfi,
  • R. Rahman,
  • M. Y. Simmons,
  • L. C. L. Hollenberg,
  • S. Rogge

DOI
https://doi.org/10.1038/s41467-020-19835-1
Journal volume & issue
Vol. 11, no. 1
pp. 1 – 11

Abstract

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Coupled donor wavefunctions in silicon are spatially resolved to evidence valley interference processes. An atomic-scale understanding of the interplay between interference, envelope anisotropy and crystal symmetries unveils a placement strategy compatible with existing technology where the exchange is insensitive to interference.