A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array

Hua Zhu; Xiuping Li; Zhihang Qi; Jun Xiao

doi:10.1109/ACCESS.2020.2991868

IEEE Access (Jan 2020)

A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array

Hua Zhu,
Xiuping Li,
Zhihang Qi,
Jun Xiao

Affiliations

Hua Zhu: ORCiD; School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, China
Xiuping Li: School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, China
Zhihang Qi: ORCiD; School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, China
Jun Xiao: ORCiD; School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, China

DOI: https://doi.org/10.1109/ACCESS.2020.2991868
Journal volume & issue: Vol. 8
pp. 84282 – 84289

Abstract

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In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The 1 x 2 OSAR antenna array is designed and fabricated with the die area of 550 x 1100μm2. The measured -10-dB impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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