Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction
Chih-Chiang Shen,
Yun-Ting Lu,
Yen-Wei Yeh,
Cheng-Yuan Chen,
Yu-Tzu Chen,
Chin-Wei Sher,
Po-Tsung Lee,
Ya-Hsuan Shih,
Tien-Chang Lu,
Tingzhu Wu,
Ching-Hsueh Chiu,
Hao-Chung Kuo
Affiliations
Chih-Chiang Shen
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Yun-Ting Lu
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Yen-Wei Yeh
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Cheng-Yuan Chen
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Yu-Tzu Chen
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Chin-Wei Sher
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Po-Tsung Lee
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Tingzhu Wu
Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China
Ching-Hsueh Chiu
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Hao-Chung Kuo
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.
