Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Chih-Chiang Shen; Yun-Ting Lu; Yen-Wei Yeh; Cheng-Yuan Chen; Yu-Tzu Chen; Chin-Wei Sher; Po-Tsung Lee; Ya-Hsuan Shih; Tien-Chang Lu; Tingzhu Wu; Ching-Hsueh Chiu; Hao-Chung Kuo

doi:10.3390/cryst9040187

Crystals (Apr 2019)

Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Chih-Chiang Shen,
Yun-Ting Lu,
Yen-Wei Yeh,
Cheng-Yuan Chen,
Yu-Tzu Chen,
Chin-Wei Sher,
Po-Tsung Lee,
Ya-Hsuan Shih,
Tien-Chang Lu,
Tingzhu Wu,
Ching-Hsueh Chiu,
Hao-Chung Kuo

Affiliations

Chih-Chiang Shen: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Yun-Ting Lu: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Yen-Wei Yeh: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Cheng-Yuan Chen: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Yu-Tzu Chen: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Chin-Wei Sher: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Po-Tsung Lee: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Ya-Hsuan Shih: Crosslight Software Inc., Taiwan Branch, Hsinchu 30013, Taiwan
Tien-Chang Lu: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Tingzhu Wu: Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China
Ching-Hsueh Chiu: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Hao-Chung Kuo: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

DOI: https://doi.org/10.3390/cryst9040187
Journal volume & issue: Vol. 9, no. 4
p. 187

Abstract

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In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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