National Science Open (Jun 2023)

Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor

  • Huang Zhiheng,
  • Li Yuhui,
  • Bo Tao,
  • Zhao Yanchong,
  • Wu Fanfan,
  • Li Lu,
  • Yuan Yalong,
  • Ji Yiru,
  • Liu Le,
  • Tian Jinpeng,
  • Chu Yanbang,
  • Zan Xiaozhou,
  • Peng Yalin,
  • Li Xiuzhen,
  • Zhang Yangkun,
  • Watanabe Kenji,
  • Taniguchi Takashi,
  • Sun Zhipei,
  • Yang Wei,
  • Shi Dongxia,
  • Du Shixuan,
  • Du Luojun,
  • Zhang Guangyu

DOI
https://doi.org/10.1360/nso/20220060
Journal volume & issue
Vol. 2

Abstract

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Excitons dominate the photonic and optoelectronic properties of a material. Although significant advancements exist in understanding various types of excitons, progress on excitons that are indirect in both real- and momentum-spaces is still limited. Here, we demonstrate the real- and momentum-indirect neutral and charged excitons (including their phonon replicas) in a multi-valley semiconductor of bilayer MoS2, by performing electric-field/doping-density dependent photoluminescence. Together with first-principles calculations, we uncover that the observed real- and momentum-indirect exciton involves electron/hole from K/Γ valley, solving the longstanding controversy of its momentum origin. Remarkably, the binding energy of real- and momentum-indirect charged exciton is extremely large (i.e., ~59 meV), more than twice that of real- and momentum-direct charged exciton (i.e., ~24 meV). The giant binding energy, along with the electrical tunability and long lifetime, endows real- and momentum-indirect excitons an emerging platform to study many-body physics and to illuminate developments in photonics and optoelectronics.

Keywords