Recent Advances in Flexible Resistive Random Access Memory

Peng Tang; Junlong Chen; Tian Qiu; Honglong Ning; Xiao Fu; Muyun Li; Zuohui Xu; Dongxiang Luo; Rihui Yao; Junbiao Peng

doi:10.3390/asi5050091

Applied System Innovation (Sep 2022)

Recent Advances in Flexible Resistive Random Access Memory

Peng Tang,
Junlong Chen,
Tian Qiu,
Honglong Ning,
Xiao Fu,
Muyun Li,
Zuohui Xu,
Dongxiang Luo,
Rihui Yao,
Junbiao Peng

Affiliations

Peng Tang: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Junlong Chen: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Tian Qiu: Department of Intelligent Manufacturing, Wuyi University, Jiangmen 529020, China
Honglong Ning: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Xiao Fu: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Muyun Li: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Zuohui Xu: Guangxi Key Lab of Agricultural Resources Chemistry and Biotechnology, Yulin Normal University, Yulin 537000, China
Dongxiang Luo: Guangzhou Key Laboratory for Clean Energy and Materials, Huangpu Hydrogen Innovation Center, Institute of Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China
Rihui Yao: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Junbiao Peng: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

DOI: https://doi.org/10.3390/asi5050091
Journal volume & issue: Vol. 5, no. 5
p. 91

Abstract

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Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and processing is an important part. Due to its simple structure and non-volatile characteristics, flexible resistive random access memory (RRAM) is the most likely flexible memory to achieve full commercialization. At present, the minimum bending radius of flexible RRAM can reach 2 mm and the maximum ON/OFF ratio (storage window) can reach 108. However, there are some defects in reliability and durability. In the bending process, the cracks are the main cause of device failure. The charge trap sites provided by appropriate doping or the use of amorphous nanostructures can make the conductive filaments of flexible RRAM steadier. Flexible electrodes with high conductivity and flexible dielectric with stable storage properties are the main development directions of flexible RRAM materials in the future.

Published in Applied System Innovation

ISSN: 2571-5577 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Technology (General): Industrial engineering. Management engineering: Applied mathematics. Quantitative methods
Website: https://www.mdpi.com/journal/asi

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