AIP Advances (Jun 2019)

Effects of forming gas annealing on luminescence properties of erbium silicate thin films

  • Devika Vipin,
  • Nikhil Modi,
  • Tyler Reynolds,
  • Bin Zhang,
  • Natasha Tabassum,
  • Gourav Bhowmik,
  • Vasileios Nikas,
  • Subha Chakraborty,
  • Spyros Gallis,
  • Mengbing Huang

DOI
https://doi.org/10.1063/1.5095953
Journal volume & issue
Vol. 9, no. 6
pp. 065018 – 065018-7

Abstract

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While hydrogen passivation has led to enhanced luminescence in many erbium doped materials, its effects on Er oxides/silicates compounds has rarely been demonstrated. Here we report effects of forming gas annealing on the luminescence properties in such Er compound materials. A broad band photoluminescence in the ultraviolet/visible range, likely arising from structural defects in the material, is significantly suppressed after forming gas annealing. Concurrently, the Er near-infrared luminescence intensity and its lifetime increase by about a factor of two and three, respectively. The samples are further characterized with Rutherford backscattering for composition information, optical absorption for optically excitable Er concentrations and extended x-ray absorption fine structures for Er local environments. We discuss the hydrogen passivation effects in the context of diffusion limited relaxation processes and suggest pathways to further improving near-infrared luminescence properties in Er compound materials.