IEEE Photonics Journal (Jan 2013)

Balanced InP/InGaAs Photodiodes With 1.5-W Output Power

  • Qiugui Zhou,
  • Allen S. Cross,
  • Yang Fu,
  • Andreas Beling,
  • Brian M. Foley,
  • Patrick Hopkins,
  • J. C. Campbell

DOI
https://doi.org/10.1109/JPHOT.2013.2262672
Journal volume & issue
Vol. 5, no. 3
pp. 6800307 – 6800307

Abstract

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We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of <; 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.

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