Raman 2D Peak Line Shape in Epigraphene on SiC

Abstract

We measured a 2D peak line shape of epitaxial graphene grown on SiC in high vacuum, argon and graphene prepared by hydrogen intercalation from the so called buffer layer on a silicon face of SiC. We fitted the 2D peaks by Lorentzian and Voigt line shapes. The detailed analysis revealed that the Voigt line shape describes the 2D peak line shape better. We have determined the contribution of the homogeneous and inhomogeneous broadening. The homogeneous broadening is attributed to the intrinsic lifetime. Although the inhomogeneous broadening can be attributed to the spatial variations of the charge density, strain and overgrown graphene ribbons on the sub-micrometer length scales, we found dominant contribution of the strain fluctuations. The quasi free-standing graphene grown by hydrogen intercalation is shown to have the narrowest linewidth due to both homogeneous and inhomogeneous broadening.

Keywords

• epitaxial graphene
• silicon carbide
• Raman spectroscopy
• 2D peak line shape
• G peak
• charge density