Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning

Shubham V. Patil; Navaj B. Mullani; Kiran Nirmal; Gihwan Hyun; Batyrbek Alimkhanuly; Rajanish K. Kamat; Jun Hong Park; Sanghoek Kim; Tukaram D. Dongale; Seunghyun Lee

Journal of Science: Advanced Materials and Devices (Dec 2023)

Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning

Shubham V. Patil,
Navaj B. Mullani,
Kiran Nirmal,
Gihwan Hyun,
Batyrbek Alimkhanuly,
Rajanish K. Kamat,
Jun Hong Park,
Sanghoek Kim,
Tukaram D. Dongale,
Seunghyun Lee

Affiliations

Shubham V. Patil: Department of Electronics and Information Convergence Engineering, Kyung Hee University, 17104, Rep. of Korea; Department of Electronic Engineering, Kyung Hee University, 17104, Rep. of Korea
Navaj B. Mullani: Research Institute for Green Energy Convergence Technology, Gyeongsang National University, Jinju 52828, Rep. of Korea; Department of Materials Science & Convergence Technology, Gyeongsang National University, Jinju 52828- Rep. of Korea
Kiran Nirmal: Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
Gihwan Hyun: Department of Electronics and Information Convergence Engineering, Kyung Hee University, 17104, Rep. of Korea; Department of Electronic Engineering, Kyung Hee University, 17104, Rep. of Korea
Batyrbek Alimkhanuly: Department of Electronics and Information Convergence Engineering, Kyung Hee University, 17104, Rep. of Korea; Department of Electronic Engineering, Kyung Hee University, 17104, Rep. of Korea
Rajanish K. Kamat: Department of Electronics, Shivaji University, Kolhapur, 416004, India; Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai-400032, India
Jun Hong Park: Department of Materials Science & Convergence Technology, Gyeongsang National University, Jinju 52828- Rep. of Korea
Sanghoek Kim: Department of Electronics and Information Convergence Engineering, Kyung Hee University, 17104, Rep. of Korea; Department of Electronic Engineering, Kyung Hee University, 17104, Rep. of Korea
Tukaram D. Dongale: Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India; Corresponding author.
Seunghyun Lee: Department of Electronics and Information Convergence Engineering, Kyung Hee University, 17104, Rep. of Korea; Department of Electronic Engineering, Kyung Hee University, 17104, Rep. of Korea; Corresponding author. Department of Electronic Engineering, Kyung Hee University, 17104, Rep. of Korea

Journal volume & issue: Vol. 8, no. 4
p. 100617

Abstract

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Metal oxide resistive memory is a potential device that can substantially influence the current roadmap for nonvolatile memory and neuromorphic computing. However, common amorphous oxide-based resistive random-access memory suffers from high forming voltages that complicate circuit design and abrupt SET behavior incompatible with analog weight updates. To overcome such limitations, wurtzite ZnO nanorods were synthesized on a fluorine-doped tin oxide (FTO) substrate and a bipolar resistive memory with the Ag/w-ZnO/FTO stacking sequence was fabricated. The hexagonal NR morphology of w-ZnO with controlled vertical growth and nanochannel formation between the NRs were produced by in situ crystalline growth. This morphology enabled a forming-free switching and an analog switching effect that emulated neuromorphic functionalities such as potentiation–depression and complex spike-time dependent plasticity-based Hebbian learning rules. Importantly, the device exhibited nonabrupt switching behavior suitable for analog weight updates in neuromorphic computing in contrast to conventional resistive memory.

Published in Journal of Science: Advanced Materials and Devices

ISSN: 2468-2284 (Print); 2468-2179 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/journal-of-science-advanced-materials-and-devices

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