We report the experimental demonstration of plasmon–plasmon scattering at room temperature in the inversion layer of a patterned metal–oxide–semiconductor structure. This fundamental result paves the way for the development of plasmon–plasmon scattering logic, a revolutionary digital logic concept based on the generation, propagation, and manipulation of plasmons in an electron fluid, which was previously theoretically projected to exhibit femtojoule power dissipations and femtosecond switching speeds, while not demanding expensive nanometer-scale silicon (Si) technology fabrication processes for its implementation.
